Postdoctoral Researcher - Power Semiconductor Device Design
Responsibilities:
Engage in research on the mechanism of high-power semiconductor devices and work related to chip design;
Be responsible for research on failure mechanisms and performance regulation methods of high-power semiconductor devices;
Undertake work on chip structure design and parameter optimization, performance simulation, process parameter simulation, and layout design;
Coordinate with work related to process R&D and wafer fabrication.
Qualifications:
Graduated with a doctoral degree from a formal full-time university (domestic or international) within the past 3 years, majoring in Electrical Engineering, Micro-Nano Electronics, Materials Physics and Chemistry, or related disciplines;
Familiar with the working principles of power semiconductor devices (such as thyristors, IGBTs, IGCTs, MOSFETs, etc.);
Proficiency in semiconductor design and simulation software such as Sentaurus and Silvaco, and familiarity with semiconductor manufacturing processes are preferred;
Reach CET-6 (College English Test Band 6) or an equivalent level or above, with a good English foundation and the ability to read English literature fluently;
Be diligent with strong initiative, have a sense of teamwork, work conscientiously, bear a strong sense of responsibility, and possess strong problem-solving and communication skills.
Contact:
Submit CV, publications, awards, and supporting documents to:
eiri-hr@tsinghua.edu.cn
Email Subject:
"Energy Internet Research Institute, Tsinghua University + Postdoctoral Researcher in Energy Think Tank + [Your Name]"
Energy Internet Research Institute, Tsinghua University welcomes your application!
